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The CMPDM302PH is a surface-mount silicon enhancement-mode P-channel MOSFET manufactured using a P-channel DMOS process. It is housed in an SOT-23F package and designed for high-speed pulsed amplifier and driver applications. The device provides a continuous drain current of 2.4 A at 25°C, with a maximum drain-source voltage of 30 V and a gate-source voltage rating of 12 V. Power dissipation is rated at 350 mW, and the operating junction temperature range spans from -55°C to +150°C.
Verify component status carefully as this part has been officially discontinued by Central Semiconductor Corp. Check for available inventory or alternative sourcing options since no direct replacement is listed in official notices. Confirm specific ordering suffixes if lead plating variations are required for your design specifications.
Select this component for designs requiring a P-channel MOSFET with logic-level gate drive compatibility and moderate current handling. Ensure thermal management accommodates the specified power dissipation limits within the operating temperature range. Verify that the SOT-23F package dimensions fit the intended PCB layout constraints.
This component belongs to Central Semiconductor's discrete semiconductor portfolio, specifically their enhancement-mode MOSFET line. It utilizes standard silicon technology optimized for surface-mount assembly. The product was marketed for general-purpose switching and amplification tasks before its discontinuation.
No public confirmed substitute part numbers are provided in the manufacturer's End of Life notice. Contact [email protected] for assistance locating alternate sources.