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The Central Semiconductor CMRDM3575 is a surface-mount complementary silicon MOSFET containing N-Channel and P-Channel enhancement-mode transistors in an SOT-963 package. It features a maximum drain-source voltage of 20V, continuous drain currents of 160mA (N-CH) and 140mA (P-CH), and a power dissipation rating of 125mW. The device operates within a junction temperature range of -65°C to +150°C with a thermal resistance of 1000°C/W. Electrical characteristics include low on-resistance values ranging from 1.5Ω to 20Ω depending on gate drive conditions, threshold voltages between 0.4V and 1.0V, and total gate charges of 0.458nC for the N-channel and 0.50nC for the P-channel.
Verify the specific ordering suffix when purchasing. The 'PBFREE' designation indicates lead-free plating options as defined by the manufacturer's standard terms. Confirm that the requested variant matches the required plating specifications for your assembly process. Ensure compatibility with the SOT-963 footprint during procurement planning.
Select this component for high-speed pulsed amplifier and driver applications requiring low on-resistance. Evaluate the thermal resistance of 1000°C/W against your system's heat dissipation capabilities. Consider the logic-level compatibility for direct interface with standard digital control signals. Verify that the 20V breakdown voltage meets the circuit's peak operating requirements.
This part belongs to the Attomini family of small surface-mount transistors manufactured by Central Semiconductor Corp. It utilizes the SOT-963 case outline, which provides a compact form factor suitable for dense PCB layouts. The marking code for this device is designated as 'CT'.
Publicly confirmed substitute part numbers are not available in the provided documentation.