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The CMS02P02T6-HF is a dual P-Channel MOSFET manufactured by Comchip Technology. It features a drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 2 A. The device utilizes SOT-26 surface-mount packaging. Key electrical parameters include a maximum gate-source voltage of ±20 V, a threshold voltage of 1 V, and a gate charge of 4 nC. Power dissipation is rated at 1.25 W under case conditions. The component operates within a temperature range of -55°C to +150°C TJ.
Verify the specific datasheet revision and detailed electrical characteristics directly from Comchip Technology before integration. Confirm that the SOT-26 footprint matches the target PCB layout requirements. Ensure thermal management strategies account for the 1.25 W power dissipation rating under actual operating conditions. Cross-reference pin assignments with standard SOT-26 definitions to prevent installation errors during assembly.
Select this component when a compact dual P-Channel solution is required for low-voltage applications. The 20 V rating suits systems powered by single-cell lithium batteries or similar low-voltage sources. Consider the 2 A current capability against peak load demands. The SOT-26 package offers a balance between lead count and thermal performance for dense board layouts.
This part belongs to Comchip Technology's discrete semiconductor portfolio, specifically within the MOSFET array category. The manufacturer specializes in surface-mount devices, including Schottky diodes and TVS protectors. The CMS series represents their standard enhancement-mode transistor offerings designed for modern electronics manufacturing processes.
No public confirmed substitute part numbers are available in the provided documentation. Engineers must evaluate alternative dual P-Channel MOSFETs based on matching Vds, Id, Rds(on), and package dimensions if this component becomes unavailable.