ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 100V 2.2A/7A PRPAK
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：2.2A (Ta), 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：260mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：680 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 25W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PR-PAK (3x3)
- Package / Case：8-PowerVDFN
Download product information
Overview
The CMS07P10V8-HF is a P-Channel MOSFET manufactured by Comchip Technology, designed for surface-mount applications. It features a Drain-to-Source Voltage (Vdss) of 100 V and operates with a Gate-to-Source Voltage (Vgs) of ±20 V. The device supports a continuous drain current of 2.2 A at ambient temperature and 7 A at case temperature. Key electrical parameters include an on-resistance (Rds(on)) of 25 mΩ, a gate charge (Qg) of 6 nC, and an input capacitance (Ciss) of 680 pF. Power dissipation reaches 2.5 W at ambient temperature and 25 W at case temperature. The component utilizes Silicon technology and is housed in a PR-PAK (3x3) package.
Feature Summary
- Single P-Channel enhancement mode transistor configuration
- Surface-mount compatible PR-PAK packaging for compact designs
- High-speed switching capability with low gate charge
- Low on-resistance for efficient power management
Applications
- High voltage power switching circuits
- DC-DC converter output stages
- Motor control driver interfaces
- Load switch applications requiring fast response
Procurement Notes
Verify the specific suffix and marking code against the official Comchip Technology datasheet to ensure authenticity. Confirm that the PR-PAK package dimensions match your PCB footprint requirements. Check for RoHS compliance status as indicated in the latest product specifications before finalizing procurement orders.
Selection Notes
Select this component when a 100 V P-Channel MOSFET is required for space-constrained designs. The PR-PAK package offers a balance between thermal performance and board area efficiency. Ensure the application current does not exceed 2.2 A without adequate heatsinking or case cooling to maintain reliability within the specified operating temperature range.
Part Context
This part belongs to Comchip Technology's single FET MOSFET lineup, specifically targeting high-voltage applications. It complements other devices in the series by offering a robust solution for power management tasks where moderate current handling and high voltage blocking are necessary. The PR-PAK format distinguishes it from standard SMD packages.
Replacement Considerations
Consult official distributor databases for verified substitute part numbers. Ensure any replacement maintains the 100 V rating, P-Channel polarity, and compatible pinout configuration.
