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Product Detailed Parameters
- Description：MOSFET N-CH 30V 100A DFN5X6
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：1.8mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：82 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4222 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.6W (Ta), 83W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DFN5x6 (PR-PAK)
- Package / Case：8-PowerTDFN
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Overview
The CMS100N03H8-HF is an N-channel silicon power MOSFET manufactured by Comchip Technology. It features a DFN5x6 (PR-PAK) surface-mount package. Key electrical parameters include a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 100 A at case temperature, with a maximum gate-source voltage (V_GS) of ±20 V. The device exhibits a typical on-resistance (R_DS(on)) of 0.0018 ohms. Power dissipation ratings are specified as 3.6 W at ambient temperature and 83 W at case temperature.
Feature Summary
- Utilizes metal-oxide semiconductor technology for efficient switching
- Designed for surface mount applications in compact form factors
- Capable of handling high continuous drain currents
Applications
- Power management circuits
- DC-DC converter modules
- Motor control systems
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the received part matches the specific suffix and marking codes defined in official documentation. Ensure storage conditions comply with moisture sensitivity levels to prevent package damage prior to assembly.
Selection Notes
Select this component for designs requiring low on-resistance and high current capacity within a small footprint. Evaluate thermal management requirements carefully due to the disparity between ambient and case power dissipation ratings. Ensure gate drive voltages remain within the specified ±20 V limit to prevent oxide breakdown.
Part Context
This part belongs to Comchip Technology's single FET and MOSFET product line. It is categorized under power field-effect transistors designed for general-purpose switching applications. The manufacturer specializes in discrete semiconductors including diodes, transistors, and protection devices.
Replacement Considerations
Public sources indicate this specific model is obsolete and no longer manufactured. Engineers should consult official substitution guides or distributor databases for verified equivalent parts that match the electrical specifications and pinout configuration.
