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Product Detailed Parameters
- Description：MOSFET P-CH 100V 10A DPAK
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：210mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1419 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 54W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The CMS10P10D-HF is a single P-Channel enhancement mode MOSFET manufactured by Comchip Technology. It features a silicon technology construction housed in a surface-mount TO-252 (DPAK) package. The device supports a drain-source breakdown voltage of 100 V and a continuous drain current of 10 A at case temperature. Key electrical parameters include a maximum gate-source voltage of ±20 V, a typical on-resistance of 48 mΩ, and a gate charge of 22 nC. Thermal performance specifies a power dissipation of 2 W at ambient temperature and 54 W at case temperature, with an operating junction temperature range up to 150°C.
Feature Summary
- Single-channel P-Channel configuration for efficient high-side switching applications
- Surface-mount DPAK package designed for compact board space utilization
- Enhancement mode operation with low gate charge for improved switching dynamics
Applications
- DC-DC converter circuits requiring high-side load switches
- Power management modules for portable electronic devices
- Motor control systems utilizing P-Channel logic interfaces
Procurement Notes
Verify the specific suffix and package variant against the official Comchip Technology datasheet before integration. Confirm thermal derating curves match your enclosure constraints. Ensure ESD handling protocols are followed during assembly due to the sensitivity of the gate oxide layer in this MOSFET architecture.
Selection Notes
Select this component when a 100 V rating and 10 A current capacity are required in a DPAK footprint. Compare on-resistance values against alternative packages to ensure thermal limits are not exceeded under continuous load conditions. Validate that the gate drive voltage aligns with the specified threshold characteristics for reliable turn-on.
Part Context
This part belongs to Comchip Technology's discrete semiconductor lineup, specifically within their MOSFET category. It serves as a power switching element distinct from their diode offerings, such as the SS series or other MOSFET variants like the CMS16P06H8-HF. The DPAK form factor distinguishes it from smaller SMD packages while offering higher thermal performance than through-hole alternatives.
Replacement Considerations
Consult official cross-reference guides for direct pin-compatible substitutes. Verify that any replacement maintains the 100 V drain-source voltage and 10 A current ratings. Ensure the alternative device utilizes the same TO-252 mechanical outline to fit existing PCB footprints without modification.
