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The CMS16N06D-HF is an N-channel MOSFET from Comchip Technology, designed for general-purpose switching and amplification. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 16 A at case temperature (Tc), with 4.4 A at ambient temperature (Ta). The device exhibits a maximum on-resistance (Rds On) of 50 mOhms. It is housed in a surface-mount TO-252 (DPAK) package, offering thermal dissipation capabilities of 2 W at Ta and 27 W at Tc.
Verify the specific datasheet version to confirm electrical parameters such as Rds On and current ratings, as these can vary by manufacturing lot or revision. Ensure the TO-252 package footprint matches your PCB layout requirements. Confirm RoHS compliance status if required for your assembly process. Cross-reference pinouts with official documentation before integration.
Select this component when a 60 V N-channel MOSFET is required for moderate current switching tasks. The DPAK package suits applications needing better thermal performance than smaller SMD packages but where through-hole mounting is undesirable. Consider the 50 mOhm Rds On for efficiency calculations in low-voltage, high-current scenarios.
This part belongs to Comchip Technology's single FET and MOSFET product line. It is categorized under general-purpose discrete semiconductors. The manufacturer provides datasheets and circuit diagrams to support integration into electronic designs requiring reliable N-channel switching elements.
The maximum drain-source breakdown voltage (Vds) is 60 V.
No, it is available only in the surface-mount TO-252 (DPAK) package.