CMS16N06D-HF

CMS16N06D-HF

$0.97
  • Description:MOSFET N-CH 60V 4.4A/16A DPAK
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:39df8b98688a Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 60V 4.4A/16A DPAK
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:4.4A (Ta), 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:50mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:815 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 27W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252 (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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CMS16N06D-HF

Overview

The CMS16N06D-HF is an N-channel MOSFET from Comchip Technology, designed for general-purpose switching and amplification. It features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 16 A at case temperature (Tc), with 4.4 A at ambient temperature (Ta). The device exhibits a maximum on-resistance (Rds On) of 50 mOhms. It is housed in a surface-mount TO-252 (DPAK) package, offering thermal dissipation capabilities of 2 W at Ta and 27 W at Tc.

Feature Summary

  • N-channel MOSFET technology for efficient switching applications
  • Surface-mount TO-252 (DPAK) package design
  • Low on-resistance for reduced power loss
  • RoHS compliant construction

Applications

  • General-purpose switching circuits
  • Amplification applications
  • Moderate voltage power management systems

Procurement Notes

Verify the specific datasheet version to confirm electrical parameters such as Rds On and current ratings, as these can vary by manufacturing lot or revision. Ensure the TO-252 package footprint matches your PCB layout requirements. Confirm RoHS compliance status if required for your assembly process. Cross-reference pinouts with official documentation before integration.

Selection Notes

Select this component when a 60 V N-channel MOSFET is required for moderate current switching tasks. The DPAK package suits applications needing better thermal performance than smaller SMD packages but where through-hole mounting is undesirable. Consider the 50 mOhm Rds On for efficiency calculations in low-voltage, high-current scenarios.

Part Context

This part belongs to Comchip Technology's single FET and MOSFET product line. It is categorized under general-purpose discrete semiconductors. The manufacturer provides datasheets and circuit diagrams to support integration into electronic designs requiring reliable N-channel switching elements.

FAQ

What is the maximum drain-source voltage for the CMS16N06D-HF?

The maximum drain-source breakdown voltage (Vds) is 60 V.

Is the CMS16N06D-HF available in a through-hole package?

No, it is available only in the surface-mount TO-252 (DPAK) package.

CMS16N06D-HFCMS16N06D-HF
$0.97
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