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Product Detailed Parameters
- Description：MOSFET P-CH 40V 23A DPAK
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：40mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1004 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 31.3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252 (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The CMS23P04D-HF is a P-channel MOSFET manufactured by Comchip Technology, designed for surface-mount applications. It features a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 23A. The device utilizes a DPAK package and operates with a gate-source voltage (VGS) of 20V. Key electrical parameters include a maximum on-resistance (RDS(on)) of 15 milliohms at VGS = -10V and a gate charge (Qg) of 68nC. It supports a power dissipation of 60W and functions within a temperature range of -55°C to +175°C junction temperature.
Feature Summary
- High current handling capability suitable for power switching applications
- Low on-resistance for improved efficiency and reduced heat generation
- Automotive-grade reliability compliant with AEC-Q101 standards
- Surface-mount design optimized for automated assembly processes
Applications
- Automotive electronics systems
- Industrial motor control circuits
- Power supply load switches
- Battery management systems
Procurement Notes
Verify the specific datasheet revision and ordering information directly from Comchip Technology official documentation before procurement. Confirm that the component meets all required automotive quality standards if used in safety-critical applications. Ensure proper handling procedures are followed due to electrostatic sensitivity. Cross-reference part numbers carefully to avoid substitution errors with similar packages or voltage ratings.
Selection Notes
Select this component when a P-channel MOSFET with high current capacity and low on-resistance is required for compact designs. Consider the DPAK package constraints for thermal management and PCB layout. Evaluate the gate charge requirements against the driving circuit capabilities to ensure adequate switching speed. Verify that the 40V rating provides sufficient margin for the specific application voltage levels.
Part Context
Comchip Technology specializes in semiconductor components including diodes and MOSFETs. The company holds ISO9001 and TS16949 certifications, indicating adherence to quality management standards. Their product portfolio includes automotive-grade components verified against AEC-Q101 specifications. This MOSFET belongs to their power transistor series aimed at industrial and automotive markets.
Replacement Considerations
Consult official Comchip Technology documentation for confirmed substitute part numbers. Do not assume compatibility based solely on package similarity or generic specifications. Verify electrical parameters and pin configurations match exactly before substitution.
