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The CMS25N03V8-HF is an N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a 20 V drain-source breakdown voltage and a continuous drain current of 25 A. The device exhibits a maximum on-resistance of 18 mΩ at specified gate-source voltages. It operates within a temperature range of -50 °C to +150 °C junction temperature, with a power dissipation rating of 21 W. The component utilizes a PDFN3x3-8L surface-mount package and incorporates silicon technology for standard switching applications.
Verify the specific datasheet revision and RoHS compliance status directly with Comchip Technology before integration. Confirm that the PDFN3x3-8L footprint matches your PCB layout requirements exactly. Ensure thermal management strategies account for the 21 W power dissipation limit under actual operating conditions. Check for any recent product change notifications or lifecycle updates regarding this part number.
Select this component when a low-voltage, high-current N-channel switch is required in a compact form factor. The 20 V rating suits 12 V systems, while the 25 A current capability supports moderate load demands. Consider the 18 mΩ on-resistance for efficiency calculations in power paths. Evaluate the thermal resistance characteristics if operating near the upper temperature limits.
This MOSFET belongs to Comchip Technology's discrete semiconductor lineup, focusing on surface-mount power devices. The CMS25 series typically targets cost-effective solutions for consumer electronics and industrial control boards. The V8 suffix likely denotes specific binning or manufacturing lot characteristics defined by the manufacturer.
Consult official substitution lists from Comchip Technology for verified equivalents. Generic replacements must match the 20 V/25 A ratings and PDFN3x3-8L package dimensions precisely. Verify pinout compatibility and electrical parameters such as threshold voltage and gate charge before swapping.