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Product Detailed Parameters
- Description：MOSFET N-CH 30V 25A 8DFN
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：21W (Tc)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-PDFN (3x3)
- Package / Case：8-PowerVDFN
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Overview
The CMS25N03V8A-HF is an N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a PDFN3x3-8L surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 20 V and a gate-source voltage of ±20 V. It delivers a continuous drain current of 25 A with a maximum on-resistance of 18 mΩ at specified conditions. Key electrical parameters include a gate threshold voltage of 2.5 V, a total gate charge of 4.1 nC, and a power dissipation rating of 21 W. The component operates within a temperature range of -50°C to +150°C junction temperature.
Feature Summary
- N-channel enhancement mode construction for efficient switching applications
- Low on-resistance design optimized for power efficiency
- Leadless surface-mount package suitable for automated assembly
Applications
- DC-DC converter circuits
- Power management modules
- Load switch implementations
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Comchip Technology before finalizing procurement. Confirm that the PDFN3x3-8L package dimensions align with your PCB footprint requirements. Ensure that thermal management strategies account for the 21 W power dissipation rating under actual operating conditions. Cross-reference the part number suffix to confirm availability and manufacturing origin.
Selection Notes
Select this component when a compact N-channel MOSFET with high current capability is required for low-voltage applications. The 20 V rating suits systems operating below this threshold. Consider the 18 mΩ on-resistance for minimizing conduction losses. Verify that the driving circuit can provide sufficient gate voltage to fully enhance the channel given the 2.5 V threshold specification.
Part Context
This part belongs to the Comchip Technology discrete semiconductor portfolio, specifically within the MOSFET category. It represents a standard silicon-based solution designed for general-purpose switching tasks. The manufacturer focuses on providing cost-effective components for consumer and industrial electronics markets.
Replacement Considerations
Consult official substitution guides from Comchip Technology for verified alternatives. Generic replacements must match the 20 V rating, 25 A current capacity, and 18 mΩ resistance while maintaining the PDFN3x3-8L footprint.
