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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 25A 8PDFN
- Series：-
- Mfr：Comchip Technology
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：25A
- Rds On (Max) @ Id, Vgs：20mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：572pF @ 15V
- Power - Max：1.7W (Ta), 20.8W (Tc)
- Operating Temperature：-55°C ~ 150°C
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PDFN (SPR-PAK ) (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The CMS25NN03V8-HF is a surface-mount N-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a maximum drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 25 A at 25°C case temperature. The device utilizes a leadless DFN package, specifically the 5x6 mm PR-PAK configuration, designed for efficient thermal dissipation with a maximum power dissipation of 47 W at case temperature. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of up to 2.1 V at 250 µA and a maximum gate charge (Qg) of 22 nC at 10 V. The component supports a driving voltage of 4.5 V or 10 V and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- High current handling capability suitable for power switching applications
- Leadless surface mount design for compact board space utilization
- Enhanced thermal performance through optimized package construction
Applications
- DC-DC converter circuits
- Motor control systems
- Power management modules
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Comchip Technology before procurement. Confirm that the ordering suffix matches the required tape and reel packaging specifications. Ensure that the supplier provides traceability documentation consistent with the manufacturer's quality standards. Cross-reference the part number against the latest obsolescence notices to confirm availability.
Selection Notes
Select this component when a 30 V N-channel MOSFET with high current capacity is required in a small form factor. Evaluate the on-resistance requirements against the load conditions to ensure efficiency targets are met. Consider the thermal resistance characteristics of the DFN5x6 package relative to the PCB copper area available for heat sinking. Verify that the gate drive voltage aligns with the specified 4.5 V or 10 V thresholds for optimal performance.
Part Context
This part belongs to the CMS25 series of surface-mount MOSFETs from Comchip Technology, which focuses on high-performance power switching solutions. The series typically includes various voltage and current ratings packaged in leadless formats to support modern miniaturization trends in electronics manufacturing. The CMS25NN03V8-HF represents a specific configuration within this lineup tailored for 30 V applications.
Replacement Considerations
Consult official substitution guides from Comchip Technology for verified pin-compatible alternatives. Check for equivalent N-channel MOSFETs with matching 30 V Vdss and comparable Id ratings in DFN packages. Validate any substitute against the original electrical parameters, particularly Rds(on) and thermal characteristics, to ensure circuit integrity.
