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Product Detailed Parameters
- Description：MOSFET N-CH 60V 55A TO220AB
- Series：-
- Mfr：Comchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：39.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 96W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The CMS55N06CT-HF is an N-Channel Power MOSFET manufactured by Comchip Technology, designed for through-hole mounting in the TO-220AB package. It features a drain-to-source voltage (Vdss) rating of 60 V and a continuous drain current (Id) capacity of 55 A at case temperature. The device supports a gate drive voltage (Vgs) of 20 V. Thermal performance specifications include a power dissipation rating of 2 W at ambient temperature and 96 W at case temperature.
Feature Summary
- High-current capability with a 55 A continuous drain rating
- Robust thermal management supporting up to 96 W at case temperature
- Standardized TO-220AB through-hole packaging for reliable integration
Applications
- Power switching circuits requiring high current handling
- DC-DC converter topologies
- Motor control applications
Procurement Notes
Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before finalizing design integration. Confirm that the TO-220AB package dimensions match the target PCB footprint and thermal pad requirements. Ensure compliance with RoHS directives as indicated in the product specifications.
Selection Notes
Select this component when a 60 V N-Channel MOSFET with high current capacity is required. The TO-220AB package facilitates effective heat sinking for high-power dissipation scenarios. Evaluate the thermal resistance parameters to ensure adequate cooling solutions are implemented for sustained operation at 55 A.
Part Context
This part belongs to Comchip Technology's single FET and MOSFET product line. It serves as a discrete power semiconductor solution for general-purpose switching applications. The TO-220AB form factor is widely used in industrial and consumer electronics where robust mechanical mounting and thermal performance are critical.
Replacement Considerations
Consult official substitution guides or equivalent part lists from Comchip Technology for verified alternatives. Cross-reference key parameters such as Vdss, Id, and package type when evaluating potential replacements.
