CMS75P06CT-HF

$1.23

Description：MOSFET P-CH 60V 75A TO220AB
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)

SKU:3ad22e0f0b58 Category: Single FETs, MOSFETs Brand: Comchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 75A TO220AB
Series：-
Mfr：Comchip Technology
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：9.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：141 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：8620 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 183W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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CMS75P06CT-HF

Overview

The CMS75P06CT-HF is a P-channel enhancement mode MOSFET manufactured by Comchip Technology. It features a maximum drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 75 A at case temperature. The device utilizes silicon technology and is housed in a TO-220AB through-hole package. Key electrical characteristics include a forward surge current (IFSM) rating of 30 A, a reverse current of 0.5 mA, and a forward voltage of 0.85 V. Power dissipation is rated at 2 W at ambient temperature and 183 W at case temperature. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

P-channel configuration for high-side switching applications
High current capability with 75 A continuous drain rating
Robust thermal performance with 183 W power dissipation at case temperature
Through-hole TO-220AB packaging for secure mounting

Applications

Power management circuits requiring P-channel switching
Motor control systems utilizing high-current loads
Industrial equipment protection and isolation stages

Procurement Notes

Verify the specific datasheet version for the CMS75P06CT-HF to confirm exact electrical limits and thermal resistance values before integration. Ensure that the TO-220AB package dimensions match the target PCB footprint or heatsink interface requirements. Confirm RoHS compliance status as indicated in official manufacturer documentation, noting any transition periods. Validate that the operating temperature range meets the environmental conditions of the final assembly.

Selection Notes

Select this component when a P-channel MOSFET with high current capacity is required for through-hole implementations. The 60 V rating suits low-voltage DC distribution systems. Consider the thermal management needs due to the significant difference between ambient and case power dissipation ratings. The TO-220AB package facilitates direct heatsinking for high-power scenarios where surface-mount options are insufficient.

Part Context

This part belongs to Comchip Technology's discrete semiconductor portfolio, specifically within the single FET and MOSFET category. It serves as a power switching element designed for robust industrial and consumer electronics applications. The TO-220AB form factor distinguishes it from surface-mount alternatives, offering mechanical stability for high-current paths.

Replacement Considerations

Consult official substitution guides for equivalent P-channel MOSFETs with matching 60 V and 75 A ratings in TO-220 packages. Verify pinout compatibility and thermal characteristics before replacing.