CMSBN4616-HF

CMSBN4616-HF

$0.80
  • Description:MOSFET 2N-CH 8A 4CSP
  • Series:-

SKU:d8f3c4286bc3 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 8A 4CSP
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:8A (Ta)
  • Rds On (Max) @ Id, Vgs:18mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.5W (Ta)
  • Operating Temperature:150°C
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:CSPB1515-4
  • Grade:-
  • Qualification:-

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CMSBN4616-HF

Overview

The CMSBN4616-HF is a dual N-channel enhancement-mode MOSFET array manufactured by Comchip Technology. It features a common-drain configuration suitable for load switch applications. The device supports a drain-source voltage of 15V and a gate-source voltage of 12V. Continuous drain current is rated at 8A. The component utilizes surface mount packaging.

Feature Summary

  • Dual N-channel enhancement mode configuration
  • Common-drain architecture facilitating bidirectional load switching
  • ESD protected design

Applications

  • Unidirectional or bi-directional load switches
  • General purpose power switching circuits
  • Protection against electrostatic discharge events

Procurement Notes

Verify the specific datasheet revision when sourcing, as manufacturing updates may occur. Confirm that the ordering suffix matches the required package type and lead-free compliance status. Cross-reference the part number with official manufacturer catalogs to ensure authenticity and availability of the correct variant.

Selection Notes

Select this component for low-voltage applications requiring dual channel control within a compact footprint. Ensure the operating voltage remains within the 15V drain-source limit. Evaluate thermal performance requirements against the 8A continuous current rating for the intended PCB layout and ambient conditions.

Part Context

This device belongs to the discrete semiconductor category, specifically within the FET and MOSFET arrays segment. It serves as a solution for managing multiple channels in space-constrained designs. The product line focuses on providing reliable switching capabilities for consumer and industrial electronics.

Replacement Considerations

The CMSBN6601-HF is a related dual N-channel MOSFET from the same manufacturer. Verify compatibility regarding voltage ratings and current handling capabilities before substitution. Ensure pinout alignment and package dimensions match the existing design constraints.

CMSBN4616-HFCMSBN4616-HF
$0.80
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