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The CMSBN6601-HF is a dual N-channel MOSFET array manufactured by Comchip Technology. It features a maximum drain-source voltage of 20V and a gate-source voltage of 12V, with a continuous drain current of 13A. The device utilizes a CSPB2718-6 surface-mount package. Key electrical parameters include a minimum forward transconductance of 6.5 S and a fall time of 55 microseconds. This component is designed for efficient switching applications requiring low profile packaging.
Verify the specific datasheet version to confirm pinout compatibility and thermal performance data. Ensure that the CSPB2718-6 package dimensions align with the PCB footprint requirements. Check for RoHS compliance status if environmental regulations apply to the final assembly. Confirm that the 20V rating provides sufficient margin for the intended operating voltage.
Select this component when a dual N-channel MOSFET solution is required in a small surface-mount form factor. The 20V rating suits low-voltage power applications. Consider the 13A current capacity for load requirements. Evaluate the 6.5 S transconductance for drive strength needs. Compare against single-channel alternatives if space allows for separate components.
This part belongs to Comchip Technology's discrete semiconductor lineup, specifically within their MOSFET arrays category. The manufacturer specializes in providing various transistor solutions for consumer and industrial electronics. The CMSBN series typically targets applications demanding reliable switching performance in compact designs.
CMSBN4616-HF is a related dual N-channel MOSFET from the same manufacturer, offering 15VDS and 8A ID. Verify voltage and current margins before substitution. No other direct cross-model substitutes are confirmed in public documentation.