CMSP3407T6-HF

CMSP3407T6-HF

  • Description:MOSFET P-CH 30V 5A 6TSOP
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tape & Reel (TR)

SKU:413bfa764728 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 5A 6TSOP
  • Series:-
  • Mfr:Comchip Technology
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:52mOhm @ 4.1A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:793 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.4W (Ta), 3W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-6
  • Package / Case:SOT-23-6

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CMSP3407T6-HF

Overview

The CMSP3407T6-HF is a P-Channel MOSFET from Comchip Technology, housed in a surface-mount package. It features a Drain-Source Breakdown Voltage (Vds) of 30 V and a continuous Drain Current (Id) of 20 A. The device utilizes advanced trench process technology for ultra-low on-resistance. Key electrical characteristics include a Rise Time of 6 ns and a Fall Time of 7 ns, supporting high-speed switching applications.

Feature Summary

  • Advanced trench process technology enabling ultra-low on-resistance through high-density cell design.
  • High-speed switching capability with specified rise and fall times of 6 ns and 7 ns respectively.
  • Designed for efficient power management with a 20 A continuous current rating.

Applications

  • Power management circuits requiring high-efficiency switching
  • DC-DC converter designs utilizing P-channel topology
  • Load switch applications in portable electronic devices

Procurement Notes

Verify the specific suffix 'T6' against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with automated surface-mount assembly processes. Cross-reference the part number with the latest datasheet revision to confirm active status and any potential engineering changes or obsolescence notices prior to final procurement decisions.

Selection Notes

Select this component for applications demanding high current handling up to 20 A with low voltage drop requirements. The fast switching speeds make it suitable for high-frequency power conversion topologies. Evaluate thermal performance constraints based on the specific PCB layout and ambient operating conditions to ensure reliable operation within the specified junction temperature range.

Part Context

This component belongs to Comchip Technology's discrete semiconductor portfolio, specifically within their MOSFET category. The manufacturer specializes in SMD discrete semiconductors, including rectifiers, diodes, and transistors. The CMSP3407T6-HF represents their trench technology offerings designed for efficiency and compact form factors in modern electronics.

Replacement Considerations

Consult official substitution guides for verified equivalents. Potential alternatives may include other P-Channel MOSFETs with similar 30 V / 20 A ratings and compatible pinouts. Verify that substitute parts meet the same switching speed and on-resistance requirements for direct replacement without circuit modification.

FAQ

What is the typical switching speed of the CMSP3407T6-HF?

The device exhibits a rise time of 6 ns and a fall time of 7 ns, indicating high-speed switching capabilities suitable for efficient power conversion.

What technology is used in the construction of this MOSFET?

The CMSP3407T6-HF utilizes an advanced trench process technology combined with a high-density cell design to achieve ultra-low on-resistance.

CMSP3407T6-HFCMSP3407T6-HF

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