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Product Detailed Parameters
- Description：MOSFET N-CH 30V 450MA SOT523
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：450mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.79 nC @ 4.5 V
- Vgs (Max)：8V
- Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The CMUDM7004 TR PBFREE is a surface-mount N-channel enhancement-mode silicon MOSFET manufactured by Central Semiconductor Corp. It utilizes an N-Channel DMOS process and is housed in a SOT-523 package. Key electrical parameters include a drain-source voltage of 30 V, continuous drain current of 450 mA, and power dissipation of 250 mW at 25°C. The device features a maximum gate-source voltage of 8.0 V and operates within a junction temperature range of -65 to +150 °C.
Feature Summary
- Logic level compatible design with low threshold voltage for efficient drive requirements
- Low on-resistance (rDS(on)) optimized for high-speed pulsed amplifier and driver applications
- Integrated electrostatic discharge (ESD) protection rated up to 2kV
Applications
- Load and power switches
- Power supply converter circuits
- Battery powered portable devices
Procurement Notes
Verify component status prior to procurement as the manufacturer has issued a Product Discontinuation Notice (PDN01276 Rev:001). Devices in the SOT-523 package are classified as End of Life (EOL) and transitioned to stock-only availability. Confirm if existing inventory can fulfill requirements or if alternative sourcing strategies are necessary due to the lack of official replacement part numbers.
Selection Notes
Select this component for designs requiring a compact N-channel MOSFET with logic-level compatibility. Ensure the application environment remains within the specified operating and storage junction temperature limits of -65 to +150 °C. Verify that the required switching speeds align with the typical turn-on and turn-off delay times provided in the datasheet specifications.
Part Context
This component belongs to the CMUDM series of small signal MOSFETs from Central Semiconductor. It serves as the complementary N-channel counterpart to the CMUDM8004 P-channel device. Both utilize the UltraMini SOT-523 surface mount package, designed for space-constrained portable electronics and automated assembly processes.
Replacement Considerations
No public confirmed substitute part numbers are available. The manufacturer lists 'N/A' for suggested replacements in the discontinuation notice. Contact Central Semiconductor customer service for potential alternate source assistance.
