Single Bipolar Transistors CP147-2N6284-WN product image

CP147-2N6284-WN

  • Description:TRANS NPN DARL 100V 20A DIE
  • Series:-

SKU:dd6886bc0df4 Category: Brand:

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CP147-2N6284-WN is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is TRANS NPN DARL 100V 20A DIE. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for CP147-2N6284-WN

  • Description:TRANS NPN DARL 100V 20A DIE
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):20 A
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 200mA, 20A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 10A, 3V
  • Power - Max:160 W
  • Frequency - Transition:4MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for CP147-2N6284-WN

CP147-2N6284-WN

Single Bipolar Transistors Overview

The CP147-2N6284-WN is a bare silicon NPN Darlington transistor die manufactured by Central Semiconductor Corp. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 20 A. The device supports a peak collector current of 40 A and operates within a junction temperature range of -65 to +200 °C. Electrical characteristics include a DC current gain (hFE) ranging from 100 to 18,000 at 10 A, with a transition frequency (fT) of 4.0 MHz. The die dimensions are 195 x 195 mils with a thickness of 11.4 mils.

Single Bipolar Transistors Feature Summary

  • High current handling capability with a 20 A continuous collector current rating
  • Wide operating temperature range extending up to +200 °C junction temperature
  • High DC current gain suitable for power switching applications
  • Silicon NPN Darlington structure designed for robust performance

Single Bipolar Transistors Applications

  • High current power switching circuits
  • Power amplifier stages
  • Industrial control systems requiring high gain
  • Motor drive interfaces

Single Bipolar Transistors Procurement Notes

Verify the End of Life status associated with the CP147 wafer process before procurement. Confirm availability of replacement inventory or transition to the designated CP247 series. Ensure that the specific WN suffix requirement for unsawn wafers aligns with manufacturing capabilities. Contact sales representatives for stock availability details as standard ordering may be restricted.

Single Bipolar Transistors Selection Notes

Select this component when a bare die solution is required for custom packaging or high-volume integration. Consider the CP247 series if the CP147 wafer process is unavailable. Evaluate thermal management requirements given the +200 °C maximum junction temperature. Verify compatibility with bonding pad specifications and metalization layers for assembly processes.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor bare die product line, specifically utilizing the CP147 wafer process. The 'WN' suffix denotes an unsawn full wafer configuration where reject dies are inked. This format is intended for manufacturers performing their own dicing and packaging operations.

Single Bipolar Transistors Replacement Considerations

The CP147 wafer process is discontinued. The official replacement is the CP247 series. Specific substitutes include CP247-2N6284-WN for unsawn wafers and CP247-2N6284-CT for singulated die in trays.

CP147-2N6284-WNCP147-2N6284-WN

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