CP210-2N4416A-CT

Description：JFET N-CH 35V 15MA DIE
Series：-

SKU:e46af66c88f6 Category: JFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 35V 15MA DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：35 V
Drain to Source Voltage (Vdss)：35 V
Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 20 V
Current Drain (Id) - Max：15 mA
Voltage - Cutoff (VGS off) @ Id：2.5 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds：4pF @ 15V
Resistance - RDS(On)：-
Power - Max：-
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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CP210-2N4416A-CT

Overview

The CP210-2N4416A is a silicon N-channel JFET bare die designed for VHF amplifier and mixer applications. It features a 15 x 15 mils die size with specific bonding pad dimensions of 3.2 x 4.0 mils for drain, source, and gate terminals. The device operates within a junction temperature range of -65 to +150 °C. Key electrical parameters include a maximum Gate-Source breakdown voltage (BVGSS) of 35 V, a Drain-Source saturation current (IDSS) ranging from 5.0 to 15 mA, and a Gate-Source cutoff voltage (VGS(OFF)) between 2.5 and 6.0 V. Forward transconductance (gFS) typically spans 4.5 to 7.5 mS.

Feature Summary

Silicon N-channel JFET structure optimized for VHF amplifier and mixer designs
Low input leakage current with typical values below 0.1 nA at specified test conditions
Hermetically compatible metallization with aluminum top side and gold backside layers

Applications

VHF amplifier circuits
Mixer applications

Procurement Notes

Verify the End of Life status before procurement. The CP210 wafer process has been discontinued. Confirm availability through authorized distributors or direct sales representatives. Check if inventory remains available for immediate shipment or if last-time buys are required. Ensure the ordering suffix matches the desired packaging format, such as CT for singulated die in waffle packs.

Selection Notes

Select this component when designing sensitive VHF front-end stages requiring low noise and high input impedance. Verify that the 35 V breakdown ratings align with the circuit's maximum operating voltages. Consider the physical dimensions of the 15 x 15 mils die for wire bonding compatibility. Evaluate the IDSS and VGS(OFF) ranges to ensure proper biasing stability across temperature variations.

Part Context

This part belongs to Central Semiconductor's discrete semiconductor lineup, specifically their JFET category. It utilizes the CP210 wafer process, which is now classified as End of Life. The product is offered as a bare die rather than a packaged transistor, intended for custom assembly into hybrid circuits or specialized packages by the system integrator.

Replacement Considerations

The CP210 wafer process is discontinued. The official replacement is the CP232V process. Use part number CP232V-2N4416A-CT as the direct substitute. Verify mechanical and electrical compatibility before implementation.