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The CP226V-2N4392 is a silicon N-channel JFET die intended for analog switching and chopper applications. It features a 20 x 17 mil die size with 3.2 x 3.2 mil bonding pads. Key electrical parameters include a gate-source breakdown voltage of 40 V, an IDSS range of 25 to 75 mA at VDS=20V, and a VGS(OFF) between 2.0 and 5.0 V. The device operates within a junction temperature range of -65°C to +175°C.
Verify the specific packaging suffix required for your assembly process. Options include unsawn wafers (WN), sawn wafers on plastic rings (WR), or singulated die in waffle trays (CT/CM). Contact Central Semiconductor directly for custom plating requests or special wafer frame orders.
Select this component when a bare die form factor is necessary for custom packaging or high-volume integration. Ensure the design accommodates the specified 20 x 17 mil die dimensions and utilizes appropriate wire bonding techniques for the 3.2 x 3.2 mil pads.
This part represents the bare die version of the standard 2N4392 N-channel JFET. It allows manufacturers to integrate the transistor directly into custom hybrid circuits or specialized packages rather than using discrete leaded or surface-mount components.
Direct replacements require matching the 2N4392 electrical characteristics and die specifications. Other manufacturers may offer equivalent N-channel JFET dies; verify compatibility with existing wire bonding and packaging infrastructure before substitution.