CP229-2N5109-CM

Overview

The CP229-2N5109-CM is an NPN RF transistor die manufactured by Central Semiconductor Corp. It is designed for radio frequency applications with a maximum collector current of 0.4 Amps and a collector-emitter breakdown voltage of 30 Volts. The component utilizes silicon technology and is supplied as a bare die, requiring specific mounting and integration into custom packages or substrates for end-use circuit implementation.

Feature Summary

• Optimized for high-frequency radio signal processing
• Capable of handling up to 0.4 Amps of collector current
• Rated for 30 Volt collector-emitter operation

Applications

• RF amplifier stages in communication equipment
• Signal processing circuits requiring small form factor integration
• Custom RF module assembly

Part Context

This part belongs to the CP229 series of RF transistor dies from Central Semiconductor. It shares functional similarities with other variants in the series but is specifically characterized for 30V operation, distinguishing it from lower voltage versions like the standard 20V die configurations within the same product family.

Replacement Considerations

Direct replacements must match the 30V rating and 0.4A current capacity. Verify pinout compatibility if integrating into existing footprints, though bare dies typically require custom layout adaptation rather than direct socket substitution.