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The CP229-2N5109-CT20 is a silicon NPN epitaxial planar RF transistor die manufactured by Central Semiconductor Corp. It features a collector-emitter breakdown voltage of 20V and a maximum collector current of 400mA. The device operates with a transition frequency of 1.2GHz. Minimum DC current gain (hFE) is specified as 40 at 50mA and 15V. The component utilizes an aluminum top side metalization and gold back side metalization, with a die size of 21.7 x 21.7 mils.
Verify the specific datasheet version and revision date corresponding to the CT20 suffix to ensure accurate parameter alignment. Confirm that the 20V breakdown voltage specification matches the application requirements, as other variants may offer different voltage ratings. Ensure compatibility with surface mount assembly processes for die components.
Select this component for designs requiring a 20V NPN RF transistor with a 1.2GHz transition frequency. Consider the 400mA current limit and hFE characteristics when designing bias networks. Evaluate the physical die dimensions and bonding pad specifications for integration into the target substrate or package.
This part belongs to the CP229 series of small signal NPN RF transistors from Central Semiconductor. The series includes various voltage ratings and packaging options. The CT20 designation indicates a specific configuration within the 2N5109 equivalent family, focusing on standard 20V operation for general RF use.
Direct substitutes include the generic 2N5109 specification. Other Central Semiconductor variants such as CP229-2N5109-CM exist but may differ in voltage rating (e.g., 30V). Verify pinout and electrical parameters before substitution.