CP243-CM5943-WN

CP243-CM5943-WN

  • Description:RF TRANS NPN 30V 2.4GHZ DIE
  • Series:-

SKU:c7cd01bb8e7a Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 30V 2.4GHZ DIE
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):30V
  • Frequency - Transition:2.4GHz
  • Noise Figure (dB Typ @ f):8dB @ 200MHz
  • Gain:11.4dB
  • Power - Max:-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 50mA, 15V
  • Current - Collector (Ic) (Max):400mA
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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CP243-CM5943-WN

Overview

The CP243-CM5943-WN is a silicon NPN RF transistor die manufactured by Central Semiconductor Corp. It features an epitaxial planar process with a die size of 21.7 x 21.7 mils and a thickness of 9.0 mils. The component supports a base bonding pad area of 3.4 mils in diameter. It is designed for high-frequency applications with a transition frequency of 2.4 GHz. The device operates within a temperature range of -65°C to 150°C junction temperature.

Feature Summary

  • Hermetically sealed construction for environmental protection
  • Epitaxial planar silicon technology for reliability
  • Optimized for RF signal amplification at 2.4 GHz
  • Wide operating temperature capability

Applications

  • RF amplifier circuits
  • High-frequency signal processing
  • Wireless communication modules
  • Military and aerospace electronics

Procurement Notes

Verify the specific ordering suffix and package configuration when sourcing. Confirm that the received component matches the CP243-CM5943-WN designation. Check datasheet revisions for any process changes. Ensure handling procedures comply with the hermetic seal requirements. Validate supplier authenticity through authorized channels.

Selection Notes

Select this component for applications requiring a discrete NPN RF transistor die. Consider the 2.4 GHz transition frequency for suitable bandwidth needs. Evaluate the -65°C to 150°C operating range against thermal constraints. Compare the epitaxial planar structure benefits with alternative technologies. Assess the hermetic package suitability for harsh environments.

Part Context

This part belongs to Central Semiconductor's line of silicon NPN RF transistors. It utilizes an epitaxial planar process for enhanced performance. The company specializes in hermetically sealed packages for demanding applications. The CM5943 series is designed for reliable operation in RF systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before substitution. Consult manufacturer guidelines for equivalent components if direct replacement is required.

CP243-CM5943-WNCP243-CM5943-WN

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