SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The CP243-CM5943-WN is a silicon NPN RF transistor die manufactured by Central Semiconductor Corp. It features an epitaxial planar process with a die size of 21.7 x 21.7 mils and a thickness of 9.0 mils. The component supports a base bonding pad area of 3.4 mils in diameter. It is designed for high-frequency applications with a transition frequency of 2.4 GHz. The device operates within a temperature range of -65°C to 150°C junction temperature.
Verify the specific ordering suffix and package configuration when sourcing. Confirm that the received component matches the CP243-CM5943-WN designation. Check datasheet revisions for any process changes. Ensure handling procedures comply with the hermetic seal requirements. Validate supplier authenticity through authorized channels.
Select this component for applications requiring a discrete NPN RF transistor die. Consider the 2.4 GHz transition frequency for suitable bandwidth needs. Evaluate the -65°C to 150°C operating range against thermal constraints. Compare the epitaxial planar structure benefits with alternative technologies. Assess the hermetic package suitability for harsh environments.
This part belongs to Central Semiconductor's line of silicon NPN RF transistors. It utilizes an epitaxial planar process for enhanced performance. The company specializes in hermetically sealed packages for demanding applications. The CM5943 series is designed for reliable operation in RF systems.
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs before substitution. Consult manufacturer guidelines for equivalent components if direct replacement is required.