CP302-MPSH10-CT

CP302-MPSH10-CT

  • Description:RF TRANS NPN 25V 650MHZ DIE
  • Series:-

SKU:d397cd2ea78b Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 25V 650MHZ DIE
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):25V
  • Frequency - Transition:650MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 4mA, 10V
  • Current - Collector (Ic) (Max):-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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CP302-MPSH10-CT

Overview

The CP302-MPSH10 is a silicon NPN RF transistor die designed for low noise UHF/VHF amplifier and high output oscillator applications. It features a collector-base voltage of 30 V, collector-emitter voltage of 25 V, and continuous collector current of 50 mA. The device operates within a junction temperature range of -65 to +150 °C. Electrical characteristics include a transition frequency (fT) of 650 MHz at 4.0 mA collector current and 10 V collector-emitter voltage. The die dimensions are 14.5 x 14.5 mils with a thickness of 9.0 mils.

Feature Summary

  • Silicon NPN RF transistor structure optimized for low noise performance in UHF and VHF bands.
  • High transition frequency capability suitable for high output oscillator applications.
  • Robust thermal operating range extending up to +150 °C junction temperature.

Applications

  • Low noise UHF amplifiers
  • VHF amplifiers
  • High output oscillators

Procurement Notes

This component has been officially classified as End of Life (EOL) by Central Semiconductor Corp. Current availability is restricted to existing stock only, with no new production scheduled. Customers should verify stock status directly with the manufacturer or authorized distributors before initiating orders, as supply is finite and subject to depletion without replacement manufacturing.

Selection Notes

Select this bare die for custom packaging solutions requiring specific mechanical integration. Verify that the application circuit can accommodate the 50 mA continuous collector current limit and the 25 V collector-emitter voltage rating. Ensure the design supports the required 650 MHz transition frequency for the intended UHF/VHF operating band.

Part Context

The CP302-MPSH10 belongs to the MPSH10 family of NPN RF transistors manufactured by Central Semiconductor Corp. This specific part number denotes the singulated die configuration packaged in a waffle tray (CT suffix). It serves as a discrete semiconductor component intended for hybrid microwave integrated circuits or custom assembly rather than standard through-hole or surface-mount PCB mounting.

Replacement Considerations

No direct replacement part numbers are available from Central Semiconductor Corp. for this EOL product. The manufacturer indicates that no alternate source parts are currently listed in their official documentation. Users must seek alternative suppliers or redesign using other available RF transistor dies.

FAQ

What is the maximum collector-base voltage for the CP302-MPSH10?

The maximum collector-base voltage (V_CBO) is 30 V.

What is the transition frequency (fT) specification?

The transition frequency is 650 MHz when tested at V_CE = 10 V, I_C = 4.0 mA, and f = 100 MHz.

Is this component available for new production?

No, the CP302-MPSH10 wafer process is discontinued and classified as End of Life (EOL). Only existing stock is available.

CP302-MPSH10-CTCP302-MPSH10-CT

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