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Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The CP302-MPSH10 is a silicon NPN RF transistor die designed for low noise UHF/VHF amplifier and high output oscillator applications. It features a collector-base voltage of 30 V, collector-emitter voltage of 25 V, and continuous collector current of 50 mA. The device operates within a junction temperature range of -65 to +150 °C. Electrical characteristics include a transition frequency (fT) of 650 MHz at 4.0 mA collector current and 10 V collector-emitter voltage. The die dimensions are 14.5 x 14.5 mils with a thickness of 9.0 mils.
Feature Summary
- Silicon NPN RF transistor structure optimized for low noise performance in UHF and VHF bands.
- High transition frequency capability suitable for high output oscillator applications.
- Robust thermal operating range extending up to +150 °C junction temperature.
Applications
- Low noise UHF amplifiers
- VHF amplifiers
- High output oscillators
Procurement Notes
This product has been officially classified as End of Life (EOL) by Central Semiconductor Corp. No replacement part numbers are currently available from the manufacturer. Availability is restricted to existing stock only. Customers requiring this component must verify current inventory status directly with authorized distributors or the manufacturer's sales team, as standard production orders cannot be placed.
Selection Notes
Select this bare die for custom packaging solutions requiring specific mechanical dimensions of 14.5 x 14.5 mils. Verify that the application circuit can accommodate the 50 mA continuous collector current limit and the 25 V collector-emitter voltage rating. Ensure the design supports the required 650 MHz transition frequency for the intended UHF/VHF operating band.
Part Context
The CP302-MPSH10 belongs to the MPSH10 family of NPN RF transistors manufactured by Central Semiconductor Corp. This specific variant is supplied as a bare die rather than a packaged component. The suffix 'WN' indicates the packing option as an unsawn full wafer where reject dies are inked. This format allows for custom assembly into specialized packages.
Replacement Considerations
No direct replacement part numbers are listed by the manufacturer. The datasheet explicitly states 'N/A, Stock Only' for all related variants including the base model MPSH10. Engineers must identify alternative sources through third-party distributors holding remaining inventory or design around the EOL status using different components.
FAQ
What does the suffix 'WN' indicate for the CP302-MPSH10?
The suffix 'WN' denotes the packing option as a full wafer that is unsawn. All dies on the wafer are 100% tested, and any rejected dies are marked with ink.
What is the maximum junction temperature for this device?
The maximum operating and storage junction temperature for the CP302-MPSH10 is +150 °C.
Is there a recommended replacement part number available?
No replacement part numbers are available. The product is classified as End of Life (EOL), and the manufacturer lists no substitutes, indicating availability is limited to existing stock only.
