CP373-CMPDM303NH-WN

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk

SKU:9a482f316591 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 3.6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：78mOhm @ 1.8A, 2.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
Vgs (Max)：12V
Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP373-CMPDM303NH-WN

Overview

The CP373-CMPDM303NH-WN is a bare silicon N-Channel MOSFET die designed for high-speed pulsed amplifier and driver applications. It features a 39 x 27 mils die size with a 7.5 mils thickness, housed in an unsawn wafer format (WN). The device supports a drain-source voltage of 30 V and a continuous steady-state drain current of 3.6 A. Electrical characteristics include a maximum gate-source voltage of 12 V, a typical on-resistance of 40 mΩ at 4.5 V gate drive, and a total gate charge of 13 nC. Operating temperatures range from -55°C to +150°C.

Feature Summary

Engineered specifically for high-speed pulsed amplifier and driver applications
Features low on-resistance and fast switching times suitable for efficient power control
Utilizes a robust silicon construction with defined mechanical dimensions for integration

Applications

High speed pulsed amplifiers
Driver circuits
Power management systems requiring bare die integration

Procurement Notes

Verify the specific suffix requirements when ordering, as packaging options such as unsawn wafers or singulated trays dictate handling procedures. Confirm plating preferences, noting that standard availability may differ from lead-free specifications. Ensure design compatibility with the bare die form factor, as this component requires custom packaging or direct mounting solutions rather than standard surface-mount packages.

Selection Notes

Select this component when designing circuits that require direct integration of semiconductor dies into custom substrates or hybrid modules. Consider the mechanical constraints of the 39 x 27 mils die size and the necessity for appropriate wire bonding pads. Evaluate thermal management strategies carefully, as the bare die configuration relies on the substrate for heat dissipation. Verify that the application environment stays within the specified junction temperature limits.

Part Context

This part belongs to the CMPDM series of N-Channel enhancement-mode MOSFETs manufactured by Central Semiconductor Corp. It represents a bare die version of the commercially packaged CMPDM303NH transistor. The CP373 prefix denotes the specific wafer process technology used during fabrication, which provides the foundational electrical properties for the device.

Replacement Considerations

The CP373 wafer process is discontinued. Official replacements utilize the CP398X process. Valid substitute part numbers include CP398X-CPDM303NH-WN for unsawn wafers and CP398X-CPDM303-CT20 for singulated trays. Verify electrical equivalence before implementation.