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Product Detailed Parameters
- Description：MOSFET N-CH 30V 3.6A DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：78mOhm @ 1.8A, 2.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The CP373-CTLDM303N-WN is a bare die N-channel enhancement-mode MOSFET manufactured using the Central Semiconductor CP373 wafer process. It features a die size of 39 x 27 mils and a thickness of 7.5 mils. The device includes aluminum top-side metalization (40,000Å) and a backside metallization stack of titanium, nickel, and silver (1,000Å/3,000Å/10,000Å). This specific part number denotes a full unsawn wafer configuration where all dies are 100% tested with reject die inked.
Feature Summary
- N-channel enhancement-mode MOSFET transistor structure
- Full unsawn wafer format with 100% electrical testing
- Silver-based backside metallization for thermal dissipation
Applications
- Custom power module integration
- High-reliability discrete semiconductor assemblies
- Specialized wafer diffusion applications
Procurement Notes
Verify current availability status as the CP373 process is classified as End of Life. Confirm if inventory remains or if transition to the CP398X replacement process is required. Contact [email protected] for technical data or alternate sourcing assistance. Minimum order quantities may apply during the transition period.
Selection Notes
Select this component for custom packaging requirements utilizing bare die technology. Ensure design compatibility with the specified 39 x 27 mil die dimensions and 7.5 mil thickness. Verify that the CP373 process meets thermal and electrical specifications before considering the CP398X replacement options.
Part Context
This component belongs to the CMPDM303NH product family within the Central Semiconductor discrete semiconductor portfolio. It utilizes the discontinued CP373 manufacturing process, which has been succeeded by the CP398X wafer process for continued production support.
Replacement Considerations
The CP373 process is End of Life. Official replacements include CP398X-CTLDM303N-WN for wafer formats and CP398X-CTLDM303N-CT for singulated tray packs.
