CP771-CXDM4060P-CT

Description：MOSFET P-CH 40V 6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray

SKU:1c2f7ea3e325 Category: Single FETs, MOSFETs Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 40V 6A DIE
Series：-
Mfr：Central Semiconductor Corp
Package：Tray
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：65mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 4.5 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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CP771-CXDM4060P-CT

Overview

The CP771-CXDM4060P is a P-Channel enhancement-mode MOSFET die manufactured by Central Semiconductor Corp. It features a 55 x 32 mil die size with a 7.5 mil thickness, optimized for low-profile applications. The device supports a drain-source voltage of 40 V and a continuous drain current of 6.0 A. Electrical characteristics include a typical on-resistance of 65 mΩ at VGS=10V and ID=6.0A, and a total gate charge of 6.5 nC. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Optimized for power management and drive circuit applications requiring high energy efficiency
Features ultra-low profile geometry suitable for wire bond attachment techniques
Top metalization is aluminum, optimized for standard wire bonding processes
Back side metalization utilizes titanium/nickel/silver layers suitable for standard die attach technologies

Applications

Power management systems
Load switching circuits
Motor drives
DC-DC conversion

Procurement Notes

Verify the specific wafer process revision required for your design, as the CP771 process is classified as End of Life. Confirm availability of the designated replacement part number or request technical data from [email protected] if alternative sourcing is needed. Ensure ordering suffixes match plating requirements, such as CT for singulated die in tray packaging.

Selection Notes

Select this component when a bare die solution is preferred over packaged transistors to minimize board space and thermal path length. The 7.5 mil thickness allows for compact integration in space-constrained designs. Verify that the package assembly capabilities support the specified top and back-side metalization schemes for reliable wire bonding and die attachment.

Part Context

This component belongs to the CXDM series of medium-power P-Channel MOSFETs designed for efficient operation. It is supplied as a bare die rather than a finished package, allowing system integrators to customize the mounting and interconnection methods. The product line focuses on minimizing on-resistance and gate charge to enhance overall system performance.

Replacement Considerations

The CP771 wafer process is discontinued. The official replacement part number is CP805-CXDM4060P-CT. Review the CP805 specifications to ensure compatibility with existing mechanical and electrical constraints before transitioning production.