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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.4A DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tray
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：91mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.6 nC @ 5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
Download product information
Overview
The CP773-CMPDM302PH is a silicon P-Channel MOSFET die designed for high-speed pulsed amplifier and driver applications. It features a 39 x 27 mils die size with a 7.5 mils thickness. The device supports a drain-source voltage of 30 V, a gate-source voltage of 12 V, and a continuous drain current of 2.4 A. Maximum pulsed drain current reaches 9.6 A. Operating junction temperature ranges from -55 to +150 °C. On-resistance is 0.091 Ω at 4.5 V gate drive and 1.2 A drain current.
Feature Summary
- Silicon P-Channel enhancement-mode bare die construction
- Optimized for high-speed pulsed amplifier and driver applications
- Capable of handling maximum pulsed drain currents up to 9.6 A
Applications
- High speed pulsed amplifiers
- Driver circuits
Procurement Notes
Verify the specific suffix required for your packaging needs, such as WN for unsawn wafers or CT for singulated die in trays. Confirm that the CP773 process is End of Life and transitioned to the CP798X wafer process. Ensure final shipments align with the twelve-month notice period and check if minimum order quantities apply for the replacement part numbers.
Selection Notes
Select this component when a discrete P-Channel MOSFET die is required for custom packaging or integration into specific driver topologies. Evaluate the 30 V breakdown voltage and 2.4 A steady-state current against circuit requirements. Consider the low on-resistance characteristics for efficiency in pulsed operation scenarios where standard packages are unsuitable.
Part Context
This component belongs to Central Semiconductor's discrete semiconductor portfolio, specifically focusing on bare die products. The manufacturer specializes in providing both standard and custom devices in various forms including surface mount, through-hole, and bare die. This product line targets niche applications requiring specific form factors not available in standard commercial packages.
Replacement Considerations
The CP773 wafer process is discontinued. Official replacements include CP798X-CPDM302PH-CT and CP798X-CPDM302PH-WN.
FAQ
What is the status of the CP773 wafer process?
The CP773 wafer process is classified as End of Life (EOL) and has been transitioned to the CP798X wafer process.
What are the available bare die packing options?
Options include unsawn wafers (WN), sawn wafers on plastic rings (WR), singulated die in waffle packs (CT), and visually inspected singulated die (CM).
