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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.4A DIE
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tray
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：91mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9.6 nC @ 5 V
- Vgs (Max)：12V
- Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The CP798X-CPDM302PH is a silicon P-channel MOSFET die designed for high-speed pulsed amplifier and driver applications. It features a drain-source voltage of 30 V, continuous drain current of 2.4 A, and maximum gate-source voltage of 12 V. The device operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a threshold voltage of 0.7 to 1.4 V at 250 µA, on-resistance of 0.091 Ω at 4.5 V and 1.2 A, and total gate charge of 9.6 nC. The die dimensions are 37.8 x 26 MILS with a thickness of 5.5 MILS.
Feature Summary
- Enhancement-mode P-channel silicon MOSFET structure optimized for high-speed pulsed amplifier and driver applications.
- Capable of handling a maximum pulsed drain current of 9.6 A with a pulse width of 10 μs.
- Features low input capacitance (800 pF) and fast switching times (ton: 12 ns, toff: 17 ns) for efficient signal processing.
Applications
- High-speed pulsed amplifier circuits
- Driver applications requiring rapid switching
Procurement Notes
Verify the specific packaging suffix required for your integration process, such as WN for unsawn wafers or CT for singulated die in trays. Confirm plating options if Tin/Lead or Lead-Free specifications are mandatory for your assembly line. Ensure compatibility with bare die mounting techniques and verify that the 37.8 x 26 MILS die size fits your substrate design constraints before finalizing orders.
Selection Notes
Select this component when designing circuits that demand high-speed switching capabilities and robust pulsed current handling. The low on-resistance and fast turn-on/turn-off times make it suitable for demanding driver applications. Consider the bare die form factor for custom packaging solutions where standard packages do not meet space or performance requirements.
Part Context
This product is a discrete semiconductor component manufactured by Central Semiconductor Corp. It belongs to the category of single FET/MOSFET devices. Unlike packaged transistors, this item is supplied as a bare die, intended for direct integration into custom substrates or advanced packaging technologies rather than through-hole or standard surface-mount PCB footprints.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify electrical parameters against existing designs if considering alternative bare die MOSFETs from other manufacturers.
