ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 350V SOT89
- Series：-
- Mfr：IXYS Integrated Circuits Division
- Package：Tube
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：350 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：35Ohm @ 140mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-89
- Package / Case：TO-243AA
Download product information
Overview
The CPC3730C is an N-channel depletion-mode vertical DMOS FET manufactured by IXYS Integrated Circuits Division under the Clare brand. It features a maximum drain-source breakdown voltage of 350V and a maximum on-state resistance of 30 ohms at 25°C. The device operates within a temperature range of -55°C to +125°C and is housed in an SOT-89 package. Key electrical characteristics include a saturated drain current of 140mA, a gate-to-source off voltage between -1.6V and -3.9V, and a total package dissipation of 1.6W.
Feature Summary
- Utilizes third-generation vertical DMOS process for high-voltage performance
- Offers low on-state resistance specifically optimized for cold environments
- Features high input impedance and robust structure against thermal runaway
Applications
- Ignition modules
- Normally-on switches
- Solid state relays
- Telecommunications systems
- Power supply circuits
Procurement Notes
Verify the specific ordering suffix (e.g., C for tube, CTR for reel) to ensure correct packaging quantity. Confirm RoHS compliance status through official documentation before procurement. Ensure the supplier provides the original manufacturer datasheet to validate electrical parameters and absolute maximum ratings.
Selection Notes
Select this component for applications requiring normally-on behavior with high voltage blocking capability. Consider the 30-ohm on-resistance limit when designing for power dissipation constraints. Verify that the operating temperature range aligns with the -55°C to +125°C specification for your specific environment.
Part Context
This part belongs to the CPC3730 series of N-channel depletion-mode FETs. It is designed for industrial and telecommunications solid-state relay applications. The device leverages proprietary silicon gate technology to achieve high reliability and performance in high-power scenarios.
Replacement Considerations
Consult official substitution lists for verified equivalents. Generic replacements may not match the specific depletion-mode characteristics or breakdown voltage requirements.
