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Product Detailed Parameters
- Description：MOSFET N-CH 600V SOT223
- Series：-
- Mfr：Littelfuse Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：0V
- Rds On (Max) @ Id, Vgs：44Ohm @ 100mA, 0V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
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Overview
The CPC3960ZTR is a depletion-mode N-channel Field Effect Transistor manufactured by Littelfuse Inc. It features a high breakdown voltage of 600V and a maximum drain-source on-resistance of 44 ohms. The device utilizes a SOT-223 surface-mount package, designed for applications requiring normally-on operation with low gate drive requirements.
Feature Summary
- Depletion-mode operation providing normally-on functionality
- High breakdown voltage capability of 600V
- Low on-resistance at cold temperatures
- High input impedance characteristics
Applications
- High voltage switching circuits
- Power management systems
- Industrial control interfaces
Procurement Notes
Verify the specific suffix ZTR indicates tape and reel packaging configuration. Confirm the manufacturer designation as Littelfuse Inc., derived from IXYS Integrated Circuits Division technology. Ensure compatibility with SOT-223 footprint requirements during procurement planning.
Selection Notes
Select this component for designs requiring a normally-on N-channel FET with high voltage tolerance. The 44-ohm on-resistance suits low-current switching applications. Verify thermal management needs for the SOT-223 package under operating conditions.
Part Context
This part belongs to the Littelfuse discrete semiconductor portfolio, specifically utilizing vertical FET technology originally developed by IXYS. It serves as a specialized solution for high-voltage depletion-mode applications where standard enhancement-mode devices are unsuitable.
Replacement Considerations
Direct substitutes require matching 600V depletion-mode N-channel specifications in a SOT-223 package. Verify on-resistance limits and gate threshold voltages against original design parameters before substitution.
