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The CPH3356-TL-W is a P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 2.5 A. The device utilizes the CPH3 package, equivalent to SOT-23-3, with dimensions of 2.9 mm in length, 1.6 mm in width, and 0.9 mm in height. Key electrical parameters include a maximum on-resistance of 156 mΩ and a gate threshold voltage range of 1.2 V to 2.6 V. It supports a maximum power dissipation of 1 W and operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix TL-W against official datasheets to confirm tape and reel packaging specifications. Ensure compatibility with standard SMD reflow soldering profiles. Confirm RoHS compliance status through manufacturer documentation prior to procurement. Validate that the component meets all required thermal and electrical ratings for the target application environment.
Select this component for designs requiring a low-voltage P-channel switch with moderate current capacity. The 20 V rating suits single-cell battery systems. Compare on-resistance values against alternative packages to ensure thermal performance meets system constraints. Verify gate drive voltage levels align with the specified threshold voltage range for reliable switching operation.
This part belongs to the CPH3 series of surface-mount MOSFETs from onsemi. The series focuses on providing robust performance in small form factors suitable for portable electronics and industrial control boards. The CPH3 designation indicates a specific lead frame and molding compound configuration distinct from standard SOT-23 variants.
CPH3356-TL-H is a verified substitute variant within the same product family.