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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The CPH3422-TL-E is an NPN bipolar junction transistor manufactured by onsemi. It utilizes a surface-mount SOT-23-3 package with dimensions of 2.9 x 1.6 x 0.9 mm. The device supports a maximum DC collector current of 5 A and a maximum collector-emitter voltage of 50 V. Additional electrical ratings include a maximum collector-base voltage of 100 V, a maximum emitter-base voltage of 6 V, and a maximum power dissipation of 900 mW. The component operates at frequencies up to 330 MHz and functions within a maximum operating temperature range of +150 °C.
Feature Summary
- High-frequency operation capability suitable for RF amplifier applications
- Robust thermal performance allowing operation up to +150 °C
- Compact surface-mount footprint for space-constrained designs
Applications
- High-frequency amplification circuits
- RF signal processing stages
- General-purpose switching applications in consumer electronics
Procurement Notes
Verify the specific suffix TL-E against the manufacturer's datasheet to confirm tape-and-reel packaging specifications and binning requirements. Ensure compatibility with standard SOT-23-3 reflow soldering profiles. Confirm RoHS and REACH compliance status through official onsemi documentation prior to final procurement decisions.
Selection Notes
Select this component when high-frequency performance near 330 MHz is required alongside moderate current handling capabilities. The SOT-23-3 package offers a balance between thermal dissipation and board space efficiency. Consider the 50 V collector-emitter rating for low-voltage circuit protection or switching tasks where compact form factors are prioritized over higher power thresholds.
Part Context
This part belongs to the CPH series of high-frequency NPN transistors from onsemi. These devices are engineered for use in radio frequency and communication systems requiring small signal amplification. The series emphasizes high transition frequencies and reliable operation in compact electronic assemblies typical of modern mobile and wireless infrastructure.
Replacement Considerations
Direct substitutes may include other SOT-23-3 NPN transistors with comparable fT and Vceo ratings. Verify pinout compatibility and thermal characteristics before substitution.
