CPH3445-TL-E

$0.14

Description：NCH 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk

SKU:a1ca93e89c29 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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CPH3445-TL-E

Overview

The CPH3445-TL-E is an N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 35 V and a continuous drain current of 3 A. The device utilizes the CPH3 surface-mount package with three pins. Key electrical parameters include a maximum drain-source on-resistance of 208 mΩ, a gate threshold voltage range of 1.2 V to 2.6 V, and a typical gate charge of 4 nC at 10 V. Maximum power dissipation is rated at 1 W, with an operating temperature range extending up to +150 °C.

Feature Summary

N-channel silicon construction for general-purpose switching applications
Enhancement mode operation with low gate threshold voltage
Surface-mount installation in a compact three-pin CPH3 package

Applications

General-purpose switching devices
Low-voltage power management circuits

Procurement Notes

Verify the specific suffix against official documentation, as variations such as TL-W or TL-H may indicate different manufacturing lots or minor parameter tolerances rather than functional changes. Confirm RoHS compliance status through the manufacturer's material declaration. Ensure the component matches the exact pinout and thermal characteristics required for the target PCB layout before finalizing procurement orders.

Selection Notes

Select this component when a single N-channel MOSFET with 35 V breakdown and 3 A current capability is required. The low gate charge supports efficient driving in moderate-speed switching environments. Verify that the 208 mΩ on-resistance meets the thermal requirements of the application. Consider the CPH3 package dimensions for space-constrained designs requiring surface-mount technology.

Part Context

This part belongs to the CPH3 series of small-signal transistors from onsemi. The series includes various bipolar junction transistors and MOSFETs designed for low-power applications. The CPH3 package provides a compact footprint suitable for high-density circuit boards. This specific model represents the N-channel MOSFET variant within the broader family of discrete semiconductor devices offered by the manufacturer.