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Product Detailed Parameters
- Description：MOSFET N-CH 30V 4A 3CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：50mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：4.7 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：430 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-CPH
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi CPH3448-TL-W is a single N-channel power MOSFET designed for surface-mount applications. It features a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 4 A at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 50 mΩ. It operates within a junction temperature range of -55°C to +150°C and has a power dissipation rating of 1 W. The component is housed in a SOT-23-3 package, suitable for compact circuit designs requiring efficient switching capabilities.
Feature Summary
- N-channel silicon construction for reliable switching performance
- Low on-resistance characteristic for efficient power handling
- Surface-mount SOT-23-3 packaging for space-constrained layouts
Applications
- Power management circuits
- Load switching applications
- DC-DC converter stages
Procurement Notes
Verify the obsolete status with the manufacturer or authorized distributors before design finalization. Confirm availability of qualified substitute components from the same family or equivalent specifications. Ensure all replacement parts meet the required electrical parameters and thermal characteristics for your specific application environment.
Selection Notes
Select this component when a 30 V, 4 A N-channel MOSFET is required in a small footprint. Consider the 50 mΩ on-resistance for efficiency needs. Evaluate thermal management requirements given the 1 W power dissipation limit. Verify compatibility with existing PCB footprints and assembly processes for SOT-23-3 packages.
Part Context
This part belongs to the onsemi discrete semiconductor portfolio, specifically within the single MOSFET category. It utilizes silicon technology and is intended for general-purpose switching tasks. The SOT-23-3 package is standard for low-power surface-mount transistor applications in consumer and industrial electronics.
Replacement Considerations
The CPH3448-TL-W is listed as obsolete. Check for direct substitutes such as the CPH3348-TL-W or other compatible N-channel MOSFETs with similar 30 V/4 A ratings. Ensure pinout compatibility and verify that electrical parameters like Rds(on) and Vgs(th) match the original design requirements.
