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The CPH3457-TL-H is an N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device features a drain-source breakdown voltage of 30 V and supports a continuous drain current of 3 A. Key electrical characteristics include a maximum on-resistance of 95 mΩ, a gate-source voltage range of ±12 V, and a threshold voltage of 400 mV. The total gate charge is specified at 3.5 nC. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 1 W.
Verify the specific suffix against official documentation, as the provided reference data primarily lists the CPH3457-TL-W variant. Confirm availability status directly with the manufacturer or authorized distributors, as lifecycle information indicates potential discontinuation for related series members. Ensure the requested part number matches the exact pinout and electrical specifications required for the target circuit design before finalizing procurement orders.
Select this component when a single N-channel MOSFET with a 30 V rating and 3 A current capacity is required. The SOT-23-3 package suits space-constrained designs. Verify that the 95 mΩ on-resistance meets the thermal requirements for the intended load. Ensure the operating environment stays within the specified -55°C to +150°C junction temperature limits for reliable performance.
This component belongs to the CPH3457 series of N-channel MOSFETs from onsemi. These devices are designed for general-purpose switching applications requiring moderate current handling capabilities. The series typically offers a balance between low on-resistance and fast switching speeds, packaged in compact surface-mount formats suitable for consumer electronics and industrial control systems.
Publicly confirmed substitute part numbers for CPH3457-TL-H are not available in the provided source material.