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Product Detailed Parameters
- Description：PCH+SBD 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The CPH5822-TL-E is a composite semiconductor device manufactured by onsemi, integrating a P-channel silicon MOSFET and a Schottky barrier diode within a single CPH package. Designed for surface mount installation, this component features a maximum drain-source voltage of 4 V and is optimized for high-efficiency power management applications. The integrated topology reduces board space and simplifies circuit design for DC/DC converter systems.
Feature Summary
- Integrates a P-channel MOSFET with a Schottky barrier diode in a single composite structure
- Optimized for low-voltage DC/DC converter applications
- Designed for surface mount technology (SMT) assembly
Applications
- DC/DC converter circuits
- Low-voltage power management systems
- Composite switching applications requiring synchronous rectification
Procurement Notes
Verify the specific electrical characteristics against the official onsemi datasheet prior to integration. Confirm that the 4 V drive series rating aligns with your system's voltage requirements. Ensure the CPH package dimensions are compatible with your PCB footprint and thermal management strategy.
Selection Notes
Select this component when a compact solution combining a P-channel switch and a freewheeling diode is required. It is suitable for low-voltage designs where minimizing component count and board area is critical. Verify compatibility with your controller's gate drive capabilities and ensure the thermal performance meets your application's dissipation needs.
Part Context
This part belongs to onsemi's CPH series of composite devices, which combine discrete semiconductor functions into unified packages. These components are engineered to simplify power supply designs by reducing the number of external components needed, thereby improving reliability and reducing overall system cost in consumer and industrial electronics.
Replacement Considerations
Check for direct pin-compatible alternatives from onsemi or other manufacturers that offer similar P-channel MOSFET and Schottky diode integration. Ensure any substitute matches the 4 V drive specification and CPH package outline to maintain mechanical and electrical compatibility.
