CPH6020-TL-E

Overview

The CPH6020-TL-E is an NPN single RF transistor manufactured by onsemi in the CPH6 surface-mount package. It features a maximum collector-to-emitter voltage of 8 V and a continuous collector current rating of 150 mA. The device achieves a typical gain-bandwidth product (fT) of 16 GHz at VCE=5V and IC=50mA, with a forward transfer gain of 13.5 dB at 1 GHz. Its typical noise figure is 1.2 dB at 1 GHz. Maximum power dissipation is rated at 700 mW when mounted on a ceramic substrate.

Feature Summary

• Designed for low-noise applications with a typical noise figure of 1.2 dB at 1 GHz
• Provides high-frequency performance with a typical cutoff frequency of 16 GHz
• Delivers high gain characteristics suitable for RF amplification

Applications

• High-frequency low-noise amplifier circuits
• RF signal processing systems requiring minimal noise insertion
• Microwave communication equipment operating at gigahertz frequencies

Procurement Notes

Verify the specific ordering suffix TL-E to confirm the tape-and-reel packaging configuration containing 3,000 pieces per reel. Ensure that static electricity precautions are observed during handling due to the high-frequency process adopted for this component. Confirm compliance with RoHS standards as indicated in the manufacturer documentation.

Selection Notes

Select this component when designing circuits requiring an NPN RF transistor with an 8 V collector-to-emitter breakdown voltage and 150 mA current capability. The CPH6 package dimensions must be accommodated within the PCB layout. Verify that the operating conditions remain within the recommended limits to maintain the specified 16 GHz gain-bandwidth product and low noise figure performance.

Part Context

This part belongs to the CPH6020 series of RF transistors produced by onsemi. It utilizes the CPH6 package, which corresponds to JEITA/JEDEC standards SC-74, SOT-26, or SOT-457. The device is specifically engineered for high-frequency applications, distinguishing it from general-purpose bipolar junction transistors through its optimized RF parameters.

Replacement Considerations

BFR360FH6327XTSA1 is identified as a similar replacement option available from Infineon Technologies.

FAQ

What is the pin configuration for the CPH6020-TL-E?

Pins 1, 2, 5, and 6 are connected to the Collector. Pin 3 is the Base, and Pin 4 is the Emitter.

Under what conditions is the typical noise figure measured?

The typical noise figure of 1.2 dB is measured at a collector-to-emitter voltage of 1 V, a collector current of 10 mA, and a frequency of 1 GHz.

What is the maximum power dissipation rating?

The maximum collector dissipation is 700 mW when the device is mounted on a ceramic substrate measuring 250 mm² × 0.8 mm.