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Product Detailed Parameters
- Description：PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi CPH6302-TL-E is a P-channel MOSFET from the 4V Drive Series, designed for surface mount applications in the CPH package. It features a maximum drain-source voltage of 20 V and a continuous drain current of 5 A. The device has a maximum power dissipation of 900 mW and operates at frequencies up to 330 MHz. Key electrical limits include a gate-source voltage of ±12 V and a junction temperature range up to +150 °C. The component measures 2.9 x 1.6 x 0.9 mm.
Feature Summary
- Optimized for low-voltage drive applications with a 4V gate threshold series design.
- High-speed switching capability suitable for RF and high-frequency signal processing.
- Compact surface-mount footprint enables dense PCB layout integration.
Applications
- RF signal switching circuits
- Low-voltage power management modules
- High-frequency analog switching applications
Procurement Notes
Verify the specific suffix (TL-E) matches the required tape-and-reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to procurement. Ensure the ordering part number aligns exactly with the requested electrical characteristics and package dimensions to avoid substitution errors.
Selection Notes
Select this component when a P-channel MOSFET with 20 V rating and 5 A current capacity is required in a compact CPH package. Consider the 4V drive series optimization for compatibility with low-voltage logic interfaces. Evaluate thermal performance against the 900 mW dissipation limit for the intended operating environment.
Part Context
This device belongs to onsemi's discrete semiconductor transistor portfolio, specifically within the MOSFET category. It complements other components in the 4V Drive Series, offering solutions for modern electronics requiring efficient power switching in small form factors. The CPH package supports automated surface-mount assembly processes.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Generic equivalents may differ in Rds(on), capacitance, or thermal resistance. Verify pinout compatibility and electrical ratings before implementation.
