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The onsemi CPH6416-TL-E is a single N-channel enhancement mode MOSFET housed in a compact CPH surface-mount package. It features a maximum drain-source voltage of 60 V and a continuous drain current rating of 6 A. The device exhibits a low on-resistance of 65 mΩ, supporting efficient power switching with a typical gate charge of 20 nC at 10 V. Designed for high-speed operation, it offers a maximum operating frequency of 500 MHz and supports a maximum junction temperature of +150 °C.
Verify the specific ordering suffix to ensure the correct tape and reel quantity matches your production requirements. Confirm that the component meets all relevant environmental compliance standards required for your target market. Cross-reference the manufacturer's datasheet for absolute maximum ratings to prevent operational overstress during design validation.
Select this component when a 60 V breakdown voltage and 6 A current capacity are required in a minimal footprint. The low on-resistance makes it suitable for applications where conduction losses must be minimized. Ensure the driving circuit can provide sufficient gate voltage to fully enhance the channel for optimal performance.
This part belongs to onsemi’s portfolio of intelligent power and sensing technologies, specifically within the discrete semiconductor category. It is designed for industrial and consumer electronics applications requiring reliable, high-performance switching solutions. The product line emphasizes robust reliability and scalable performance for mission-critical systems.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before integrating any substitute components into existing designs.
The maximum gate-source voltage is rated at -20 V to +20 V.
Yes, the device supports a maximum operating frequency of 500 MHz due to its ultrahigh-speed switching characteristics.