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Product Detailed Parameters
- Description：MOSFET N-CH 35V 6A 6CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：35 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：37mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：470 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-CPH
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The CPH6443-TL-W is an N-channel MOSFET from onsemi, designed for low-voltage drive series applications. It features a 35 V drain-source breakdown voltage and supports a continuous drain current of 6 A. The device exhibits a maximum on-resistance of 73 mΩ at specified conditions. Gate-source voltage limits are defined between -20 V and +20 V, with a threshold voltage of 1.2 V. Total gate charge is rated at 10 nC. The component utilizes silicon technology and is housed in a SOT-26-6 surface-mount package.
Feature Summary
- N-channel configuration optimized for low-voltage drive series requirements
- Surface-mount construction within a compact SOT-26-6 package
- Silicon-based semiconductor technology for standard switching operations
Applications
- Low-voltage power switching circuits
- General-purpose signal switching applications
- Battery-powered device power management
Procurement Notes
This component is listed as obsolete or end-of-life by the manufacturer. Availability through authorized distributors may be limited to remaining stock or third-party sources. Verify current lifecycle status and sourcing channels directly with suppliers before design finalization. Ensure compatibility with existing supply chain constraints due to potential discontinuation.
Selection Notes
Select this part for single-channel N-channel switching tasks requiring moderate current handling up to 6 A. The 35 V rating suits low-voltage systems. Consider the 73 mΩ on-resistance for thermal management in high-duty-cycle applications. The SOT-26-6 package dictates PCB layout constraints. Confirm that the 1.2 V threshold voltage aligns with the driving logic levels of the control circuitry.
Part Context
The CPH6443-TL-W belongs to onsemi's discrete power MOSFET portfolio, specifically categorized under low-voltage drive series components. These devices are engineered for cost-effective solutions in consumer electronics and industrial control systems where space efficiency and reliable switching performance are prioritized over high-power density metrics.
Replacement Considerations
No verified public substitute part numbers are available in the provided documentation. Consult official cross-reference tools or distributor databases for equivalent components if this specific model is unavailable.
