CPH6635-TL-H

CPH6635-TL-H

$0.43
  • Description:MOSFET N/P-CH 30V/20V 0.4A 6CPH
  • Series:-

SKU:76cda4f24bc7 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V/20V 0.4A 6CPH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V, 20V
  • Current - Continuous Drain (Id) @ 25°C:400mA, 1.5A
  • Rds On (Max) @ Id, Vgs:3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:1.58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:7pF @ 10V
  • Power - Max:800mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:6-CPH
  • Grade:-
  • Qualification:-

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CPH6635-TL-H

Overview

The CPH6635-TL-H is a complementary dual power MOSFET from the CPH6 series, featuring an N-channel and P-channel pair in a single surface-mount package. It offers a drain-source voltage of 30V for the N-channel and 20V for the P-channel. The device supports continuous drain currents of 0.4A and 1.5A respectively, with on-resistances of 3.7 Ohms and 280 mOhms. Designed for SMD/SMT installation in a 6-CPH package, it operates within a temperature range of -55°C to +150°C and dissipates up to 800mW.

Feature Summary

  • Complementary dual configuration integrating N-channel and P-channel MOSFETs
  • Low on-resistance characteristics for efficient switching performance
  • Surface-mount design suitable for compact PCB layouts

Applications

  • Battery protection circuits
  • Power management modules
  • Load switching applications

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS and REACH compliance details via official documentation. Check for obsolescence notices from onsemi. Ensure storage conditions meet manufacturer specifications to prevent degradation. Validate pinout compatibility during integration planning.

Selection Notes

Evaluate thermal dissipation requirements against the 800mW power rating. Compare on-resistance values with circuit efficiency targets. Verify gate drive voltage compatibility with the 20V maximum limit. Assess package dimensions for mechanical fit within the target enclosure. Consider lifetime availability constraints when designing long-term production runs.

Part Context

This component belongs to the CPH6 series of complementary MOSFET arrays by onsemi. It provides a space-saving solution for applications requiring paired N/P-channel switching. The series is designed for general-purpose low-voltage power management tasks in consumer and industrial electronics.

Replacement Considerations

  • CPH6635

CPH6635-TL-HCPH6635-TL-H
$0.43
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