ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 24V 6A 6CPH
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：20mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：900mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：6-CPH
- Grade：-
- Qualification：-
Download product information
Overview
The CPH6636R-TL-W is a dual N-channel power MOSFET in a common-drain configuration, housed in a SOT-26 (SC-74) package. It features a drain-to-source voltage of 24 V and a continuous drain current of 6 A. The device supports low-voltage drive with an on-resistance as low as 20 mΩ at VGS = 2.5 V. Key electrical parameters include a total gate charge of 3 nC, turn-on delay time of 65 ns, and fall time of 98 μs. It includes a built-in gate resistor and protection diode, operating within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel MOSFET structure in a common-drain configuration
- Optimized for low-voltage drive applications
- Integrated built-in gate resistor and protection diode
Applications
- Lithium-ion battery charging switches
- Lithium-ion battery discharging switches
Procurement Notes
Verify the specific ordering suffix TL-W against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure that the component meets all required environmental standards for the intended application before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring a dual N-channel MOSFET with a common-drain topology. Consider the 24 V breakdown voltage and 6 A current rating when designing power paths. Evaluate the low on-resistance characteristics at various gate-source voltages to ensure efficient switching performance in low-voltage drive environments.
Part Context
This part belongs to the CPH6 series from onsemi, designed specifically for high-density mounting in portable electronics. The dual configuration allows for space-saving designs in battery management systems where multiple switching elements are required within a compact footprint.
Replacement Considerations
Consult the manufacturer's cross-reference list for verified substitutes. Ensure any replacement maintains the same common-drain configuration, voltage ratings, and package dimensions to guarantee compatibility with existing board layouts.
