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Product Detailed Parameters
- Description：MOSFET N-CH 12V 1.6A 4DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：34mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.9 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：462 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：4-DSBGA (1x1)
- Package / Case：4-UFBGA, DSBGA
Download product information
Overview
The CSD13201W10 is a single-channel N-Channel NexFET Power MOSFET manufactured by Texas Instruments. It utilizes silicon technology and features a PICOSTAR-3 surface-mount package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 30 V, a continuous drain current (Id) of 3.1 A, and a maximum on-resistance (Rds On) of 109 mOhms. The device operates with a gate-source voltage range of -8 V to +8 V and has a threshold voltage (Vgs th) of 650 mV. Additional specifications include a gate charge (Qg) of 1.04 nC, power dissipation (Pd) of 500 mW, and an operating temperature range from -55°C to +150°C.
Feature Summary
- NexFET technology for enhanced power switching performance
- Single-channel enhancement mode configuration
- Compact PICOSTAR-3 surface-mount packaging
Applications
Procurement Notes
Verify the specific datasheet revision and ordering information directly with Texas Instruments or authorized distributors before procurement. Confirm that the PICOSTAR-3 package dimensions and pinout match your PCB layout requirements. Ensure that thermal management solutions are adequate for the specified 500 mW power dissipation in your target application environment.
Selection Notes
Select this component for low-voltage applications requiring moderate current handling within a minimal footprint. The 30 V rating and 3.1 A current capacity suit small signal switching tasks. Consider the 109 mOhm on-resistance for efficiency calculations. The wide operating temperature range supports diverse environmental conditions.
Part Context
This part belongs to the Texas Instruments NexFET family of power MOSFETs. These devices are designed for high-efficiency power management in compact electronic systems. The CSD13201W10 specifically targets applications needing reliable N-Channel switching in space-constrained designs.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult Texas Instruments for compatible alternatives based on specific electrical and mechanical constraints.
