ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 12V 31A 6DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：20mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：715 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.65W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DSBGA (1x1.5)
- Package / Case：6-UFBGA, DSBGA
Download product information
Overview
The CSD13303W1015 is a single N-channel enhancement-mode power MOSFET from the NexFET series by Texas Instruments. It features a maximum drain-source voltage of 12 V and a continuous drain current of 3.5 A. The device utilizes a DSBGA surface-mount package with six pins, measuring 1.5 mm in length, 1 mm in width, and 0.38 mm in height. Key electrical parameters include a maximum on-resistance of 23 mΩ, a typical gate charge of 3.9 nC at 4.5 V, and a power dissipation rating of 1.65 W. The component operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- NexFET technology provides ultra-low resistance for improved efficiency
- Enhanced switching performance through optimized gate charge characteristics
- Robust thermal management capabilities supporting high-temperature operation
Applications
- DC-DC converter output stages
- Low-voltage load switching circuits
- Power management modules for portable devices
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel configuration. Confirm RoHS compliance status via the manufacturer datasheet. Ensure the DSBGA footprint dimensions align with the PCB layout requirements. Check for moisture sensitivity level ratings if reflow soldering is planned. Validate that the 12 V rating meets the system's peak voltage demands.
Selection Notes
Select this component for applications requiring low voltage handling and compact surface-mount integration. The 12 V rating suits systems operating below this threshold. Consider the 23 mΩ on-resistance for minimizing conduction losses. Evaluate the 3.5 A current capacity against peak load requirements. The small DSBGA package is suitable for space-constrained designs.
Part Context
This part belongs to the CSD13303W family of NexFET power MOSFETs. These components are designed for low-voltage, high-efficiency power conversion. The series emphasizes reduced on-resistance and fast switching speeds. They are commonly used in modern electronic devices requiring efficient power regulation.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility before replacing. Ensure voltage and current ratings meet or exceed original specifications.
