ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 12V 3.5A 6DSBGA
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：10.2mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.2 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1370 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DSBGA (1x1.5)
- Package / Case：6-UFBGA, DSBGA
Download product information
Overview
The CSD13306WT is a single N-channel NexFET Power MOSFET manufactured by Texas Instruments. It features a 12 V drain-source breakdown voltage and supports a continuous drain current of 3.5 A. The device exhibits an ultra-low maximum on-resistance of 0.0155 Ω. It incorporates a built-in diode within its configuration. The component utilizes Metal-Oxide-Semiconductor technology and is housed in a 6-DSBGA package, specifically identified as GRID ARRAY R-XBGA-B6 with six terminals.
Feature Summary
- NexFET technology for enhanced power efficiency
- Ultra-low on-resistance design
- Integrated body diode configuration
Applications
- Low-voltage DC-DC converter circuits
- Power management modules requiring high efficiency
- Synchronous rectification applications
Procurement Notes
Verify the specific suffix 'WT' against official Texas Instruments documentation to confirm exact packaging and tape-and-reel specifications. Ensure compliance with RoHS and REACH directives as indicated in manufacturer records. Confirm moisture sensitivity level and recommended soldering profiles prior to assembly to prevent component damage during manufacturing processes.
Selection Notes
Select this component for designs prioritizing low conduction losses in 12 V systems. The small DSBGA footprint suits space-constrained layouts. Evaluate thermal performance requirements given the 3.5 A current rating and low resistance characteristics. Ensure gate drive voltages align with standard logic levels for optimal switching performance.
Part Context
This part belongs to the CSD13306W series of NexFET Power MOSFETs from Texas Instruments. The series focuses on low-voltage, high-efficiency switching solutions. The WT suffix typically denotes specific reel or packaging variations within the broader product line, distinct from bare die or alternative package options.
Replacement Considerations
Consult official cross-reference guides for compatible alternatives. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) before substitution. Ensure any replacement maintains the same 12 V rating and 6-terminal DSBGA form factor.
