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Product Detailed Parameters
- Description：MOSFET N-CH 20V 500MA 3PICOSTAR
- Series：FemtoFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 8V
- Rds On (Max) @ Id, Vgs：1190mOhm @ 100mA, 8V
- Vgs(th) (Max) @ Id：1.35V @ 2.5µA
- Gate Charge (Qg) (Max) @ Vgs：0.281 nC @ 10 V
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：10.5 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：3-PICOSTAR
- Package / Case：3-XFDFN
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Overview
The CSD15380F3T is a single N-channel enhancement mode MOSFET from the FemtoFET family, manufactured by Texas Instruments. It utilizes silicon technology and is housed in a PICOSTAR-3 surface-mount package with dimensions of 0.69x0.60 mm. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 500 mA at ambient temperature. Key electrical parameters include a maximum on-resistance (Rds On) of 1.46 Ohms at 10 V gate drive, a gate charge (Qg) of 216 pC, and a threshold voltage (Vgs th) of 850 mV. It operates within a junction temperature range of -55°C to +150°C with a power dissipation rating of 500 mW.
Feature Summary
- Ultra-small PICOSTAR-3 footprint designed for high-density PCB layouts
- Low gate charge characteristics enabling efficient switching performance
- Enhanced mode operation optimized for low-voltage applications
Applications
- Portable consumer electronics requiring minimal board space
- Battery-powered devices utilizing low-voltage power management
- Small signal switching circuits in compact modules
Procurement Notes
Verify the specific suffix 'T' indicates tape-and-reel packaging when ordering. Confirm the exact part number matches the datasheet specifications for the PICOSTAR-3 package. Ensure compatibility with surface-mount assembly processes. Check for RoHS compliance status as indicated in official documentation. Validate that the 20V rating meets the circuit requirements.
Selection Notes
Select this component for designs prioritizing extreme miniaturization over high current capacity. The 1.46 Ohm on-resistance limits suitability for high-power loads compared to larger packages. Consider the 500 mA current limit when designing load paths. The FemtoFET series offers a balance between size and performance for low-voltage logic interfaces.
Part Context
This device belongs to Texas Instruments' FemtoFET series, which focuses on minimizing footprint for portable applications. It complements other small-signal MOSFETs in the lineup but is distinct from higher-current NexFET variants like the CSD17381F4. The PICOSTAR-3 package provides a standardized solution for ultra-compact single-channel switching needs.
Replacement Considerations
Direct substitutes may include other 20V N-channel MOSFETs in similar tiny packages, though exact pin-compatible replacements require verifying Rds On and Qg values. Higher current alternatives like the CSD17381F4 offer lower resistance but differ in voltage and package constraints.
