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Product Detailed Parameters
- Description：MOSFET N-CH 20V 22A 6SON
- Series：NexFET™
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：22A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：419 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-SON (2x2)
- Package / Case：6-WDFN Exposed Pad
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Overview
The CSD15571Q2 is a 20-V N-Channel NexFET power MOSFET manufactured by Texas Instruments. It features a single SON package with dimensions of 2 mm x 2 mm and six pins. The device exhibits a typical on-resistance (RDS(on)) of 19.2 mOhm at 4.5 V gate drive. It supports a continuous drain current of 22 A at ambient temperature and dissipates up to 2.5 W of power under the same conditions. Key switching parameters include a fall time of 4.1 ns and a rise time of 17.2 ns, with a minimum forward transconductance of 25 S.
Feature Summary
- NexFET technology for enhanced power efficiency
- Compact 6-pin SON 2x2 mm surface mount package
- Low on-resistance for reduced conduction losses
Applications
- DC-DC converter modules
- Power management integrated circuits
- Synchronous rectification applications
Procurement Notes
Verify the specific ordering suffix to ensure compatibility with required packaging formats such as tape and reel configurations. Confirm that the component meets RoHS compliance standards if required for your assembly process. Cross-reference the manufacturer part number with official Texas Instruments documentation to validate electrical characteristics against your design specifications before procurement.
Selection Notes
Select this component when a low-profile, high-current solution is required for 20-V systems. The small footprint suits space-constrained designs. Ensure thermal management strategies account for the 2.5 W power dissipation rating. Verify that the gate drive voltage aligns with the optimal RDS(on) performance range specified in the datasheet for maximum efficiency.
Part Context
This device belongs to the NexFET family from Texas Instruments, designed for high-efficiency power switching. It utilizes advanced semiconductor processes to minimize resistance and switching losses. The product line targets modern power supply architectures requiring compact form factors and reliable performance in consumer and industrial electronics.
Replacement Considerations
Consult official substitution guides for compatible alternatives within the NexFET portfolio. Verify pinout compatibility and electrical parameter overlaps before replacing. Ensure any substitute maintains the same package type and thermal characteristics to preserve board layout integrity.
