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The CSD16325Q5 is a single N-channel NexFET power MOSFET manufactured by Texas Instruments. It features a 25-V drain-source voltage rating and a maximum continuous drain current of 100 A at case temperature. The device exhibits a typical on-resistance of 2.2 mOhm. It is housed in an 8-pin VSON-CLIP (DQH) package with dimensions of 5 mm x 6 mm. The component supports a junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and tape-and-reel specifications. Confirm that the requested variant matches the required electrical ratings and thermal characteristics for your specific application environment before finalizing procurement.
Select this component when a 25-V rating is sufficient and ultra-low on-resistance is critical for efficiency. The VSON-CLIP package offers superior thermal performance compared to standard SON packages, making it suitable for high-current applications where space is constrained but thermal management is essential.
This part belongs to the NexFET family of silicon power MOSFETs from Texas Instruments. The series focuses on combining low Rds(on) with advanced packaging technologies like DualCool to enhance system reliability and power density in modern electronic designs.
Check for CSD16325Q5C as a potential variant within the same product folder. Ensure any substitute maintains the 25-V rating, similar Rds(on), and compatible pinout configuration.